i, u na. 20 stern ave. springfield, new jersey 07081 u.s.a. MJ10005 telephone: (973) 376-2922 (212) 227-6005 fax: (973) 376-8960 switchmode series npn silicon power darlington transistor with base-emitter speedup diode the mj 10005 darlington transistor is designed for high-voltage, high-speed, power switching in inductive circuits where fall time is critical. it is particularly suited for line operated switch mode applications such as: switching regulators inverters solenoid and relay drivers motor controls deflection circuits fast turn-off times 40 ns inductive fall time ? 25c (typ) 650 ns inductive storage time ? 25c (typ) operating temperature range -65 to +200c 100c performance specified for: reversed biased soa with inductive loads switching times with inductive loads saturation voltages leakage currents 20 ampere npn silicon power darlington transistors 400 volts 175 watts h .?7s -j max. \ 135 max. seating .168 max. both ends maximum ratings .ms r max. thermal characteristics (1) pulse test: pulse width = 5.0 ms, duty cycle 10%. to-3 rating collector-emitter voltage collector-emitter voltage collector-emitter voltage emitter base voltage collector current ? continuous ? peak(1) base current ? continuous ? peak(1) total power dissipation @ tc = 25c @tc = 100c derate above 25c operating and storage junction temperature range symbol vceo vcex vcev veb to icm ib !bm pd tj.tstg value 400 450 500 8.0 20 30 2.5 5.0 175 100 1.0 -65 to +200 unit vdc vdc vdc vdc adc adc watts w/c c characteristic thermal resistance, junction to case maximum lead temperature for soldering purposes 1/8" from case for 5 seconds symbol rejc tl max 1.0 275 unit "c/w "c nj semi-conductors reserves the right to change test conditions, parameter* limits and package dimensions without notice information fomished by nj semiconductors is believed to be both accurate and reliable at the time of goina to press. however nj semi-conductors assumes no responsibility for any errors or omissions discoveved in its use ni semi-conductors encourages customers to verify that datasheets are current before placing orders
electrical characteristics (tc = 25c unless otherwise noted) characteristic symbol min typ max unit off characteristics collector-emitter sustaining voltage (table 1) (ic = 250 ma, ib = 0, vc|amp = rated vceo) collector emitter sustaining voltage (table 1 , figure 1 2) (ic = 2.0 a, vc|amp = rated vcex, tc = 100c) (ic = 10 a, vc|amp = rated vcex, tc = 100c) collector cutoff current (vcev = ra'ed value, vbe(ofr) = 1 .5 vdc) (vcev = rated value. vbe(off) = 1.5 vdc, tc = 150-0) collector cutoff current (vce = rated vcev, &be = 50 u tc = 100c) emitter cutoff current (veb = 2.0vdc, lc = 0) vceo(sus) vcex(sus) 'cev icer iebo 400 450 325 ? ? ? ? ? ? ? ? ? ? 0.25 5.0 5.0 175 vdc vdc madc madc madc second breakdown second breakdown collector current with base forward biased is/b see figure 11 on characteristics (2) dc current gain (ic = 5.0 adc, vce = 5.0 vdc) (ic = 10adc,vce=5.0vdc) collector emitter saturation voltage (lc = 10 adc, ib = 400 madc) (ic = 20adc, !b = 2.0adc) (lc = 10 adc, ib = 400 madc, tc = 100c) base emitter saturation voltage (ic = 10 adc, ib = 400 madc) (ic = 10 adc, ib = 400 madc, tc = 100c) diode forward voltage (1) (lf = 10adc) "fe vce(sat) vbe(sat) vf 50 40 ? ? ? ? ? _ 3.0 600 400 1.9 3.0 2.0 2.5 2.5 5.0 vdc vdc vdc dynamic characteristics small-signal current gain (ic = 1.0 adc, vce = 10 vdc, ftest = 1.0 mhz) output capacitance (vcb = 10 vdc, ie = o, ftest = 100 khz) hfe cob 10 100 ? ? ? 325 ? pf switching characteristics resistive load (table 1) delay time rise time storage time fall time (vcc = 250vdc, lc = 10a, in* = acld ma vdc/ ?\ ^ fl whr t = so n? duty cycle s 2%). td v ts tf ? ? ? ? 0.12 ~~l 0.2 0.6 0.15 0.2 0.6 1.5 0.5 us us us ms inductive load clamped (table 1) storage time crossover time storage time crossover time (ic = 10 a(pk), vdamp = rated vcx, 'eh = 400 ma, vbe(off) = 5.0 vdc, tc = 100c) (lc = 10 a(pk), vc|amp = rated vcx, tc = 25'>c) tsv tc ?sv tc ? ? ? ? 1.0 0.4 0.65 0.2 2.5 1.5 ? _ us us us us
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